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| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSD13N10TDN33 | Dual | N-Ch | 100 | 20 | 15 | 70 | 82 | - | - | 85 | 107 | - | - | - | - | 390 | DFN3X3-8L |
The WSD13N10TDN33 is a Dual N-channel MOSFET designed with a voltage rating of 100V, a continuous current capacity of 15A, and a low typical resistance of 70mΩ at 10V.
This component is housed in a compact DFN3X3-8L package, which offers excellent thermal dissipation and a small footprint for space-constrained circuit board designs.
It is highly suited for consumer electronics and power management circuits including electronic cigarettes, wireless chargers, car chargers, motor controllers, digital products, and small home appliances.
According to the technical specifications, the gate-source voltage (VGS) rating for the WSD13N10TDN33 MOSFET is ±20V.
The WSD13N10TDN33 has an input capacitance (Ciss) of 390 pF, which supports efficient and fast switching speeds in high-frequency applications.
