The WSD2073DN33 is a high-performance Dual P-channel MOSFET engineered for high efficiency and reliability. Featuring a voltage rating of -20V, a continuous drain current of -25A, and a low typical resistance of 13mΩ, this component is optimized for power management and switching applications.
What are the primary electrical specifications of the WSD2073DN33 MOSFET?
The WSD2073DN33 is a Dual P-channel MOSFET featuring a drain-source breakdown voltage (VDS) of -20V, a continuous drain current (ID) of -25A, and a typical gate-source voltage (VGS) rating of 12V.
What package type is used for WSD2073DN33?
This MOSFET is packaged in a space-saving DFN3X3-8L package, which offers excellent thermal dissipation and is ideal for high-density modern electronic circuit designs.
What is the on-state resistance (RDS(ON)) performance of this MOSFET?
The on-state resistance varies by test conditions: at @4.5V, the typical RDS(ON) is 13mΩ (maximum 17mΩ); at @2.5V, the typical RDS(ON) is 18mΩ (maximum 25mΩ).
What is the input capacitance (Ciss) value of WSD2073DN33?
The WSD2073DN33 MOSFET has a typical input capacitance (Ciss) of 2000 pF, which helps ensure stable performance in switching applications.
In which electronic products is this MOSFET commonly used?
Typical applications include electronic cigarettes, wireless chargers, car chargers, system controllers, various digital products, small household appliances, and other consumer electronics.
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