Free Sample WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET Supplier, Product

Part Number:WSD4280DN22 BVDSS:-15V ID:-4.6A RDSON:47mΩ   Channel:Dual P-channel Package:DFN2X2-6L

Product Description

The voltage of WSD4280DN22 MOSFET is -15V, the current is -4.6A, the resistance is 47mΩ, the channel is Dual P-channel, and the package is DFN2X2-6L.

Voltage
-15V
Current
-4.6A
Resistance
47mΩ
Channel
Dual P-ch
Package
DFN2X2-6L
Applications & Features
Bidirectional blocking switch
DC-DC conversion applications
Li-battery charging
E-cigarette MOSFET
Wireless charging MOSFET
Car charging MOSFET
Controller MOSFET
Digital product MOSFET
Small household appliances MOSFET
Consumer electronics MOSFET
Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage -15 V
VGS Gate-Source Voltage ±8 V
ID@Tc=25℃ Continuous Drain Current, VGS = -4.5V1 -4.6 A
IDM 300μS Pulsed Drain Current, (VGS =-4.5V) -15 A
PD Power Dissipation Derating above TA = 25°C (Note 2) 1.9 W
TSTG, TJ Storage Temperature Range -55 to 150
RθJA Thermal Resistance Junction-ambient 1 65 ℃/W
RθJC Thermal Resistance Junction-Case1 50 ℃/W
Electrical Characteristics
(TJ=25 ℃, unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -15 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-1A --- 47 61
VGS=-2.5V , ID=-1A --- 61 80
VGS=-1.8V , ID=-1A --- 90 150
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -0.62 -1.2 V
△VGS(th) VGS(th) Temperature Coefficient --- 3.13 --- mV/℃
IDSS Drain-Source Leakage Current VDS=-10V , VGS=0V , TJ=25℃ --- --- -1 uA
VDS=-10V , VGS=0V , TJ=55℃ --- --- -5
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-5V , ID=-1A --- 10 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 --- Ω
Qg Total Gate Charge (-4.5V) VDS=-10V , VGS=-4.5V , ID=-4.6A --- 9.5 --- nC
Qgs Gate-Source Charge --- 1.4 ---
Qgd Gate-Drain Charge --- 2.3 ---
Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=1Ω , ID=-3.9A --- 15 --- ns
Tr Rise Time --- 16 ---
Td(off) Turn-Off Delay Time --- 30 ---
Tf Fall Time --- 10 ---
Ciss Input Capacitance VDS=-10V , VGS=0V , f=1MHz --- 781 --- pF
Coss Output Capacitance --- 98 ---
Crss Reverse Transfer Capacitance --- 96 ---
Frequently Asked Questions (FAQ)
What is the voltage and current rating of the WSD4280DN22 MOSFET?
The WSD4280DN22 MOSFET features a Drain-Source Voltage (VDS) of -15V and a Continuous Drain Current (ID) of -4.6A (at Tc=25℃).
What is the typical static drain-source on-resistance (RDS(ON)) for this device?
The typical RDS(ON) is 47mΩ when operating at VGS = -4.5V. At VGS = -2.5V, the typical resistance is 61mΩ, and at VGS = -1.8V, it is 90mΩ.
What packaging and channel configuration does the WSD4280DN22 use?
It uses a Dual P-channel configuration and is housed in a compact DFN2X2-6L package.
What applications are suitable for this MOSFET?
This MOSFET is suitable for bidirectional blocking switches, DC-DC conversion, Li-battery charging, wireless charging, car charging, controllers, digital products, small household appliances, and various consumer electronics.
What is the operating temperature range for the WSD4280DN22?
The storage and operating junction temperature (TSTG, TJ) ranges from -55 to 150 ℃.

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