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| Part number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON) (mΩ) | Ciss (pF) |
Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | |||||||
| WSD2067DN32 | Dual+ESD | P-Ch | -20 | 8 | -3.5 | - | - | - | - | 60 | 99 | 75 | 120 | 105 | 180 | 420 | DFN3X2-8S |
The WST2026 MOSFET features a voltage rating of -20V, a continuous drain current of -3.5A, and a static drain-source on-resistance (RDS(ON)) of 60mΩ. It is configured as a Dual P-Channel device housed in a DFN3X2-8S package.
These MOSFETs are widely applied in automotive electronics, LED lighting solutions, audio equipment, digital consumer products, small household appliances, and battery protection boards.
Comparable replacement models and industry cross-references include AOS AON4803 and AON4805L.
The WSD2067DN32 is configured as a Dual P-Channel MOSFET with integrated ESD protection, designed to enhance system robustness against electrostatic discharge.
The typical input capacitance (Ciss) for the WSD2067DN32 MOSFET is rated at 420 pF, which supports reliable switching performance.
