The WSD3020DN33 is a high-performance Dual N-channel MOSFET designed to deliver efficient power management with a voltage rating of 30V and a continuous current capacity of 21A. Featuring an exceptionally low on-state resistance of 17mΩ, it optimizes power distribution and thermal efficiency in compact electronic designs.
Applications
Electronic cigarettes
Wireless chargers
Controllers
Digital products
Small appliances
Consumer electronics
Technical Specifications
| Part Number |
Configuration |
Type |
VDS |
VGS |
ID (A) |
RDS(ON)(mΩ) |
RDS(ON)(mΩ) |
Ciss |
Package |
| (V) |
±(V) |
Max. |
@10V |
@6V |
@4.5V |
@2.5V |
@1.8V |
| Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
(pF) |
| WSD3020DN33 |
Dual |
N-Ch |
30 |
20 |
21 |
17 |
19 |
- |
- |
20 |
25 |
- |
- |
- |
- |
526 |
DFN3X3-8L |
Cross Reference & Equivalent Models
ON & FAIRCHILD
FDMC0310AS, FDMS7670, FDMC8026S, FDMS8880, FDMS8888
VISHAY
SiSA12ADN, SiSHA12ADN, SiS472ADN
NIKO
PE616BA, PE6H6BA, PE636BA
Frequently Asked Questions (FAQ)
Q
What are the core electrical ratings of the WSD3020DN33 MOSFET?
The WSD3020DN33 MOSFET operates at a maximum drain-source voltage (VDS) of 30V, supports a continuous drain current (ID) of 21A, and features a low on-resistance (RDS(ON)) of 17mΩ.
Q
What is the configuration and package type of this MOSFET?
It is structured as a Dual N-channel configuration and comes in a compact, surface-mount DFN3X3-8L package.
Q
What typical applications is the WSD3020DN33 designed for?
It is widely used in electronic cigarettes, wireless chargers, power controllers, digital products, small household appliances, and other consumer electronics.
Q
What are the equivalent or replacement cross-reference parts for WSD3020DN33?
Compatible equivalent models include AOS AON7804, ON/Fairchild FDMC0310AS/FDMS7670, Vishay SiSA12ADN, Infineon/IR BSZ0908ND, Niko PE616BA, and Huayi HYG170ND03LA1C1.
Q
What is the typical input capacitance (Ciss) value?
The WSD3020DN33 has a typical input capacitance (Ciss) of 526 pF, ensuring fast switching speed and reduced switching losses.
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