The WSD3056DN33 is a high-performance Dual N-channel MOSFET designed to deliver efficient power management with a 30V drain-source voltage, 35A continuous drain current capacity, and a low 10mΩ on-resistance, housed in a compact DFN3X3-8L package.
What are the primary specifications of the WSD3056DN33 MOSFET?
The WSD3056DN33 is a Dual N-channel MOSFET with a maximum voltage rating of 30V, a continuous current limit of 35A, and a typical on-resistance (RDS(ON)) of 10mΩ at 10V.
What package is the WSD3056DN33 MOSFET housed in?
This device is packaged in a space-saving and thermally optimized DFN3X3-8L package.
What is the gate-source voltage (VGS) limit for this component?
The maximum gate-source voltage (VGS) for the WSD3056DN33 is ±20V.
What are the typical applications of the WSD3056DN33?
It is commonly used in electronic cigarettes, wireless chargers, car chargers, motor controllers, digital products, small household appliances, and various consumer electronics.
What are the cross-reference equivalents for WSD3056DN33?
Equivalent models include AOS AON7804 and PANJIT PJQ4427DP.
What is the on-resistance (RDS(ON)) performance at different voltages?
At VGS = 10V, the typical RDS(ON) is 10mΩ (maximum 13mΩ). At VGS = 4.5V, the typical RDS(ON) is 14mΩ (maximum 18mΩ).
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