What are the primary specifications of the WSD6035DN33 MOSFET?
The WSD6035DN33 features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 40A, and a static drain-source on-resistance (RDS(ON)) of 20mΩ.
What channel configuration and package does this MOSFET use?
This component is configured as a Dual N-channel MOSFET and comes in a compact DFN3X3-8L package.
What are the main application areas for WSD6035DN33?
It is highly suitable for electronic cigarettes, wireless chargers, car chargers, system controllers, digital products, small household appliances, and other consumer electronics.
What is the typical input capacitance (Ciss) value of WSD6035DN33?
The typical input capacitance (Ciss) for this MOSFET is 1370 pF, which helps ensure stable and efficient switching operations.
How does the on-resistance change under different gate voltages?
Under a gate voltage (@10V), the resistance is 20mΩ (typical) / 32mΩ (max), and under (@4.5V), it is 30mΩ (typical) / 38mΩ (max). Please refer to the specification table for exact parameters under different conditions.
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