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The voltage of WSD4064DN33 MOSFET is 40V, the current is 13A, the resistance is 19mΩ, the channel is Dual N-channel, and the package is DFN3X3-8L.
| Part number | Configuration | Type | VDS / VGS | ID (A) | RDS(ON) (mΩ) Max. / Typ. | RDS(ON) (mΩ) Max. / Typ. | Ciss (pF) | Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VDS (V) | VGS ±(V) | @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||
| Value | Value | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | ||||
| WSD4064DN33 | Dual | N-Ch | 40 | 20 | 13 | 19 | 25 | - | - | 25 | 35 | - | - | - | - | 800 | DFN3X3-8L |
A1: The WSD4064DN33 MOSFET operates at a maximum voltage of 40V, carries a continuous current of 13A, and has an on-resistance (RDS(ON)) of 19mΩ at 10V.
A2: The WSD4064DN33 configuration is a Dual N-channel MOSFET, which integrates two independent N-channel transistors into a single package.
A3: It is supplied in a compact and thermally efficient DFN3X3-8L package, suitable for high-density modern circuit layouts.
A4: Typical applications include electronic cigarettes, wireless chargers, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
A5: The typical input capacitance (Ciss) for the WSD4064DN33 is 800 pF, which supports stable switching performances.
A6: Yes, the POTENS PDB3810H serves as a reference model for this device configuration.
