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The voltage of WSD3048TDN56 MOSFET is 40V, the current is 50A, the resistance is 4.8mΩ, the channel is Dual N-Ch, and the package is DFN5X6-8L.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | Ciss | Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | |||||
| WSD3048TDN56 | Dual | N-Ch | 30 | 20 | 50 | 4.8 | 5.5 | - | - | 7.2 | 9.5 | - | - | - | - | 1100 | DFN5X6-8L |
The WSD3048TDN56 features a voltage of 40V, a continuous current limit of 50A, and a low drain-source on-state resistance (RDS(ON)) of 4.8mΩ.
It is a Dual N-Channel (N-Ch) MOSFET housed in a high-efficiency DFN5X6-8L package.
This model is highly suitable for electronic cigarettes, wireless chargers, car chargers, controllers, digital products, small appliances, and general consumer electronics.
According to the parameters, the Drain-to-Source Voltage (VDS) is 30V and the Gate-to-Source Voltage (VGS) is ±20V under specific test conditions.
The typical input capacitance (Ciss) value for this MOSFET is 1100 pF.
