Cross Reference / Alternative Model: POTENS PDC0810T
Frequently Asked Questions
What are the primary specifications of the WSD30N10DN56T MOSFET?
The WSD30N10DN56T is a Dual N-Channel MOSFET featuring a maximum drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 12A, and a typical drain-source on-resistance (RDS(ON)) of 70mΩ at 10V. It is housed in a compact DFN5X6-8L package.
In what kind of applications is the WSD30N10DN56T commonly used?
This MOSFET is highly versatile and designed for use in e-cigarettes, wireless chargers, electric motors, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
What is the gate-source voltage (VGS) rating for the WSD30N10DN56T?
The gate-source voltage rating for the WSD30N10DN56T MOSFET is ±20V, providing reliable protection and operation range under standard driving conditions.
How does the RDS(ON) resistance behave at different driving voltages?
At a gate voltage of 10V, the typical RDS(ON) is 70mΩ (with a maximum of 95mΩ). When operated at 4.5V, the typical RDS(ON) is 98mΩ (with a maximum of 120mΩ), ensuring efficient performance across different gate-drive thresholds.
Is there a compatible cross-reference or alternative to the WSD30N10DN56T?
Yes, the POTENS PDC0810T serves as a comparable alternative and cross-reference model suitable for replacement evaluations.
What is the input capacitance (Ciss) of the WSD30N10DN56T MOSFET?
The WSD30N10DN56T MOSFET features a typical input capacitance (Ciss) of 780 pF, which helps in reducing switching losses during operation.
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