China FDC634P Si3443DDV PMDT670UPE Medium and low power MOSFETs Supplier, Products

Part Number:FDC634P Si3443DDV PMDT670UPE Channel:Dual P-channel Package:SOT-23-6L

Product Description

MOSFET Specifications Comparison

FDC634P

  • Voltage (BVDSS) -20V
  • Current (ID) -3.5A
  • Resistance (RDSON) 80mΩ

Si3443DDV

  • Voltage (BVDSS) -20V
  • Current (ID) -4A
  • Resistance (RDSON) 90mΩ

PMDT670UPE

  • Voltage (BVDSS) -20V
  • Current (ID) 0.55A
  • Resistance (RDSON) 850mΩ
Target Applications
E-cigarette MOSFET
Controller MOSFET
Digital Product MOSFET
Small Household Appliances
Consumer Electronics
Frequently Asked Questions (FAQ)
What are the core parameters of the WST2011 FET?
The WST2011 is a Dual P-channel FET with a voltage rating (BVDSS) of -20V, a current rating (ID) of -3.2A, and an internal resistance (RDSON) of 80mΩ. It comes packaged in an SOT-23-6L format.
How does the internal resistance (RDSON) of FDC634P compare to WST2011?
Both the FDC634P and the WST2011 feature the same internal resistance (RDSON) of 80mΩ at a rated voltage of -20V, making them highly comparable in terms of resistance performance.
What are the specs of Si3443DDV compared to WST2011?
The Si3443DDV operates at -20V with a slightly higher current capacity of -4A and an internal resistance (RDSON) of 90mΩ, whereas the WST2011 features -3.2A current capacity and 80mΩ internal resistance.
What is the package type of the WST2011 FET?
The WST2011 FET is designed in a compact and standardized SOT-23-6L package, suitable for space-constrained circuit designs.
Which applications are these -20V MOSFETs suitable for?
These MOSFETs are widely applied in power management circuits of e-cigarettes, system controllers, digital products, small household appliances, and various consumer electronics.

Related Products