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The WST2088A is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2088A meet the RoHS and Green Product requirement with full function reliability approved.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±12 | V |
| ID@Tc=25℃ | Continuous Drain Current, VGS @ 4.5V | 7.5 | A |
| ID@Tc=70℃ | Continuous Drain Current, VGS @ 4.5V | 4.5 | A |
| IDP | Pulsed Drain Current | 24 | A |
| PD@TA=25℃ | Total Power Dissipation | 1.25 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.018 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=6A | --- | 10.7 | 14 | mΩ |
| VGS=2.5V , ID=5A | --- | 12.8 | 17 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.4 | 0.63 | 1.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=6A | --- | 10 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.4 | --- | ||
| Td(on) | Turn-On Delay Time | VDS=10V , VGS=4.5V , RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
| Tr | Rise Time | --- | 15 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 33 | --- | ||
| Tf | Fall Time | --- | 13 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 590 | --- | pF |
| Coss | Output Capacitance | --- | 125 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 90 | --- |
