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The WST8205 is a high performance trench N-Ch MOSFET with extremely high cell density, providing excellent RDSON and gate charge for most small power switching and load switching applications. The WST8205 meets RoHS and Green Product requirements with full functional reliability approval.
Our advanced technology incorporates innovative features that set this device apart from others in the market. With high cell density trenches, this technology enables greater integration of components, leading to enhanced performance and efficiency.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±12 | V |
| ID@Tc=25℃ | Continuous Drain Current, VGS @ 4.5V1 | 5.8 | A |
| ID@Tc=70℃ | Continuous Drain Current, VGS @ 4.5V1 | 3.8 | A |
| IDM | Pulsed Drain Current2 | 16 | A |
| PD@TA=25℃ | Total Power Dissipation3 | 2.1 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=5.5A | --- | 24 | 28 | mΩ |
| VGS=2.5V , ID=3.5A | --- | 30 | 45 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.2 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -2.33 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=5A | --- | 25 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.5 | 3 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=5.5A | --- | 8.3 | 11.9 | nC |
| Qgs | Gate-Source Charge | --- | 1.4 | 2.0 | ||
| Qgd | Gate-Drain Charge | --- | 2.2 | 3.2 | ||
| Td(on) | Turn-On Delay Time | VDD=10V , VGEN=4.5V , RG=6Ω, ID=5A, RL=10Ω | --- | 5.7 | 11.6 | ns |
| Tr | Rise Time | --- | 34 | 63 | ||
| Td(off) | Turn-Off Delay Time | --- | 22 | 46 | ||
| Tf | Fall Time | --- | 9.0 | 18.4 | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 625 | 889 | pF |
| Coss | Output Capacitance | --- | 69 | 98 | ||
| Crss | Reverse Transfer Capacitance | --- | 61 | 88 |
