Q: What are the primary specifications of the WSR200N08 FET?

A: The WSR200N08 is an N-channel FET featuring a BVDSS of 80V, a current rating (ID) of 200A, and an internal resistance (RDSON) of 2.9mΩ in a TO-220 package.

Q: Which equivalent MOSFETs can be cross-referenced with this model?

A: It can be cross-referenced and replaced with AOS TAOT480L, ON Semiconductor FDP032N08B, STMicroelectronics STP130N8F7 / STP140N8F7, Toshiba TK72A08N1 / TK72E08N1, and Potens PDP8970.

Q: What is the package style of the WSR200N08 N-channel FET?

A: The package style for the WSR200N08 N-channel FET is TO-220.

Q: What is the internal resistance (RDSON) value of the WSR200N08?

A: The WSR200N08 has an ultra-low internal resistance (RDSON) of 2.9mΩ, which helps in reducing conduction losses.

Q: What are the typical applications for the WSR200N08 FET?

A: This FET is widely used in E-cigarettes, wireless charging, motors, BMS, emergency power, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small home appliances, and consumer electronics.