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The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The WSR200N08 meets the RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 200 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 144 | A |
| IDM | Pulsed Drain Current2,TC=25°C | 790 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 1496 | mJ |
| IAS | Avalanche Current, Single pulse,L=0.5mH | 200 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 345 | W |
| PD@TC=100℃ | Total Power Dissipation4 | 173 | W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | 175 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=30A | --- | 197 | --- | nC |
| Qgs | Gate-Source Charge | --- | 31 | --- | ||
| Qgd | Gate-Drain Charge | --- | 75 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V ,RG=3Ω, ID=30A | --- | 28 | --- | ns |
| Tr | Rise Time | --- | 18 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 42 | --- | ||
| Tf | Fall Time | --- | 54 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 8154 | --- | pF |
| Coss | Output Capacitance | --- | 1029 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
