The WSR140N12 is the highest performance trench N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSR140N12 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Advanced high cell density Trench technology
Excellent CdV/dt effect decline
ST STP40NF12 Cross Reference Equivalent
Frequently Asked Questions
Q:
What is the WSR140N12?
The WSR140N12 is a high-performance trench N-channel MOSFET characterized by an extremely high cell density, providing low RDS(ON) and optimized gate charge parameters for various power applications.
Q:
What are the primary applications for the WSR140N12 MOSFET?
It is widely used in High Frequency Point-of-Load Synchronous Buck Converters, Networking DC-DC Power Systems, medical devices, major home appliances, power supplies, and Battery Management Systems (BMS).
Q:
Does the WSR140N12 support environmental and safety compliance standards?
Yes, it fully complies with both RoHS and Green Product requirements. Additionally, the device features 100% EAS (Equivalent Avalanche Energy) guarantee and has approved full function reliability.
Q:
What are the key technical parameter limits for this MOSFET?
It features a maximum Drain-Source Voltage (VDS) of 120V, a Continuous Drain Current (ID) of 140A at TC=25℃, and a single pulse avalanche energy (EAS) rated at 400mJ.
Q:
Can the WSR140N12 replace equivalent models like the ST STP40NF12?
Yes, the WSR140N12 acts as an equivalent cross-reference option to standard industry models such as the ST STP40NF12, offering advanced trench technology and superior gate charge capabilities.
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