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The WSF6012 MOSFET is a high-performance device with a high cell density design. It provides excellent RDSON and gate charge suitable for most synchronous buck converter applications. Additionally, it meets RoHS and Green Product requirements, and comes with 100% EAS guarantee for full functionality and reliability.
| Symbol | Parameter | Rating | Units | |
|---|---|---|---|---|
| N-Channel | P-Channel | |||
| VDS | Drain-Source Voltage | 60 | -60 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID @ TC=25℃ | Continuous Drain Current, VGS @ 10V¹ | 20 | -15 | A |
| ID @ TC=70℃ | Continuous Drain Current, VGS @ 10V¹ | 15 | -10 | A |
| IDM | Pulsed Drain Current² | 46 | -36 | A |
| EAS | Single Pulse Avalanche Energy³ | 200 | 180 | mJ |
| IAS | Avalanche Current | 59 | -50 | A |
| PD @ TC=25℃ | Total Power Dissipation⁴ | 34.7 | 34.7 | W |
| TSTG | Storage Temperature Range | -55 to 150 | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID = 1mA | --- | 0.063 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance² | VGS = 10V, ID = 8A | --- | 28 | 37 | mΩ |
| VGS = 4.5V, ID = 5A | --- | 37 | 45 | |||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250uA | 1 | --- | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS = 48V, VGS = 0V, TJ = 25℃ | --- | --- | 1 | uA |
| VDS = 48V, VGS = 0V, TJ = 55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS = ±20V, VDS = 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS = 5V, ID = 8A | --- | 21 | --- | S |
| Rg | Gate Resistance | VDS = 0V, VGS = 0V, f = 1MHz | --- | 3.0 | 4.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS = 48V, VGS = 4.5V, ID = 8A | --- | 12.6 | 20 | nC |
| Qgs | Gate-Source Charge | --- | 3.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.3 | --- | ||
| Td(on) | Turn-On Delay Time | VDD = 30V, VGS = 4.5V, RG = 3.3Ω, ID = 1A |
--- | 8 | --- | ns |
| Tr | Rise Time | --- | 14.2 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 24.6 | --- | ||
| Tf | Fall Time | --- | 4.6 | --- | ||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1MHz | --- | 670 | --- | pF |
| Coss | Output Capacitance | --- | 70 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 35 | --- |
