Frequently Asked Questions
Q1: What are the key specifications of the WSD60N10GDN56 FET?
A1: The WSD60N10GDN56 is an N-channel FET featuring a BVDSS voltage of 100V, a current capacity of 60A, and a low resistance of 8.5mΩ, all housed in a DFN5X6-8 package.
Q2: Which alternative part numbers can the WSD60N10GDN56 replace?
A2: It serves as a compatible cross-reference or replacement for model numbers such as NTMFS6B14N, SiR84DP, SiR87ADP, BSC19N1NS3G, TPH6R3ANL, and TPH8R8ANH.
Q3: In what package is the WSD60N10GDN56 FET supplied?
A3: This N-channel MOSFET is designed and supplied in a standardized, compact DFN5X6-8 package, which supports efficient thermal management and PCB space savings.
Q4: What are the primary application fields for this MOSFET?
A4: It is widely applied in modern power management applications including E-cigarettes, wireless charging stations, motor systems, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and consumer electronics.
Q5: Why is the low resistance of 8.5mΩ important for this device?
A5: A low on-resistance (RDS(on)) of 8.5mΩ reduces conduction power losses, improves overall power efficiency, and minimizes heat generation during high-current operation.
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