Frequently Asked Questions
❓ What are the primary specifications of the WSD75N12GDN56 MOSFET?
The WSD75N12GDN56 is an N-channel MOSFET designed for high performance with a Drain-to-Source voltage of 120V, continuous current capability of 75A, and a low typical on-resistance (RDS(ON)) of 6mΩ. It is housed in a compact DFN5x6-8 package.
❓ What applications can utilize the WSD75N12GDN56 MOSFET?
This N-channel MOSFET is highly optimized for power switching circuits and is commonly used in medical equipment, drones, PD power supplies, LED power drivers, and various types of industrial equipment.
❓ Are there equivalent replacement options for the WSD75N12GDN56?
Yes, compatible replacement equivalents include AOS MOSFET models such as AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923, as well as the PANJIT MOSFET model PSMQC76N12LS1.
❓ What is the thermal resistance performance of this MOSFET?
The WSD75N12GDN56 shows efficient thermal characteristics with a Junction-to-Case thermal resistance (RθJC) of 1.0 ℃/W and a Junction-to-Ambient thermal resistance (RθJA) of 50 ℃/W.
❓ What are the operation and storage temperature limits?
The device is rated to operate safely within a broad junction and storage temperature range (TJ, Tstg) of -55 ℃ up to 150 ℃. The maximum temperature limit for soldering is 260 ℃.
❓ What are the input and output capacitance parameters for WSD75N12GDN56?
Under test conditions of VGS = 0V, VDS = 50V, and f = 1.0MHz, the typical Input Capacitance (Ciss) is 4282 pF, Output Capacitance (Coss) is 429 pF, and Reverse Transfer Capacitance (Crss) is 17 pF.
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