China WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET Factories, Distributor

Part Number:WSD60N12GDN56 BVDSS:120V ID:70A RDSON:10mΩ Channel:N-channel Package:DFN5X6-8

Product Description

WSD60N12GDN56 N-channel MOSFET technical specifications, key parameter overview and industry standard cross-reference models.

🔌
120V
Voltage
70A
Current
🔬
10mΩ
Resistance
⚙️
DFN5X6-8
Package
💡 Applications
Medical equipment MOSFET
Drones MOSFET
PD power supplies MOSFET
LED power supplies MOSFET
Industrial equipment MOSFET
🔄 Alternative Models & Cross Reference
AOS MOSFET Alternatives
AON6226 AON6294 AON6298 AONS6292 AONS6692 AONS66923
PANJIT MOSFET Alternative
PSMQC76N12LS1
POTENS Semiconductor MOSFET Alternative
PDC974X
📊 Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 120 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current 70 A
IDP Pulsed Drain Current 150 A
EAS Avalanche Energy, Single pulse 53.8 mJ
PD@TC=25℃ Total Power Dissipation 140 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
⚡ Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 120 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A --- 10 15
VGS=4.5V, ID=10A --- 18 25
VGS(th) Gate Threshold Voltage VGS=VDS, ID=250uA 1.2 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V, TJ=25℃ --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA
Qg Total Gate Charge (10V) VDS=50V, VGS=10V, ID=25A --- 33 --- nC
Qgs Gate-Source Charge --- 5.6 ---
Qgd Gate-Drain Charge --- 7.2 ---
Td(on) Turn-On Delay Time VDD=50V, VGS=10V, RG=2Ω, ID=25A --- 22 --- ns
Tr Rise Time --- 10 ---
Td(off) Turn-Off Delay Time --- 85 ---
Tf Fall Time --- 112 ---
Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 2640 --- pF
Coss Output Capacitance --- 330 ---
Crss Reverse Transfer Capacitance --- 11 ---
IS Continuous Source Current VG=VD=0V, Force Current --- --- 50 A
ISP Pulsed Source Current --- --- 150 A
VSD Diode Forward Voltage VGS=0V, IS=12A, TJ=25℃ --- --- 1.3 V
trr Reverse Recovery Time IF=25A, dI/dt=100A/µs, TJ=25℃ --- 62 --- nS
Qrr Reverse Recovery Charge --- 135 --- nC
❓ Frequently Asked Questions
What are the primary electrical ratings for the WSD60N12GDN56 MOSFET?
The WSD60N12GDN56 MOSFET features a voltage rating of 120V, a continuous drain current of 70A, and a static drain-source on-resistance (RDS(ON)) of 10mΩ.
What channel type and package style does this MOSFET use?
It is an N-channel configuration MOSFET designed in a DFN5X6-8 package format.
What are the main application fields for the WSD60N12GDN56?
This component is widely used in medical equipment, drone electronics, PD power supplies, LED power supplies, and various industrial equipment controllers.
Which AOS MOSFET models can be cross-referenced with this product?
Cross-reference options from AOS include AON6226, AON6294, AON6298, AONS6292, AONS6692, and AONS66923.
Are there equivalent components from PANJIT and POTENS Semiconductor?
Yes, alternative equivalent components include PANJIT's PSMQC76N12LS1 and POTENS Semiconductor's PDC974X.
What is the operating temperature range for this device?
Both the operating junction temperature (TJ) and storage temperature (TSTG) ranges are rated from -55℃ to 150℃.

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