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The voltage of WSD100N15DN56G MOSFET is 150V, the current is 100A, the resistance is 6mΩ, the channel is N-channel, and the package is DFN5X6-8.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 150 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Continuous Drain Current, VGS @ 10V (TC=25℃) | 100 | A |
| IDM | Pulsed Drain Current | 360 | A |
| EAS | Single Pulse Avalanche Energy | 400 | mJ |
| PD | Total Power Dissipation (TC=25℃) | 160 | W |
| RθJA | Thermal resistance, junction-ambient | 62 | ℃/W |
| RθJC | Thermal resistance, junction-case | 0.78 | ℃/W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 175 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 9 | 12 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID=250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=20A | --- | 66 | --- | nC |
| Qgs | Gate-Source Charge | --- | 26 | --- | ||
| Qgd | Gate-Drain Charge | --- | 18 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=2Ω, ID=20A | --- | 37 | --- | ns |
| Tr | Rise Time | --- | 98 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 55 | --- | ||
| Tf | Fall Time | --- | 20 | --- | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 5450 | --- | pF |
| Coss | Output Capacitance | --- | 1730 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 195 | --- |
