China WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET Product, Distributor

Part Number:WSD60N10GDN56 BVDSS:100V ID:60A RDSON:8.5mΩ Channel:N-channel Package:DFN5X6-8

Product Description

The WSD60N10GDN56 is a high-performance N-channel MOSFET designed for efficient power management and switching applications.

Voltage 100V
Current 60A
Resistance 8.5mΩ
Package DFN5X6-8
Key Applications
E-cigarettes MOSFET Wireless charging MOSFET Motors MOSFET Drones MOSFET Medical care MOSFET Car chargers MOSFET Controllers MOSFET Digital products MOSFET Small household appliances MOSFET Consumer electronics MOSFET
Cross Reference & Equivalents
AOS MOSFET: AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923
Onsemi / FAIRCHILD MOSFET: NTMFS6B14N
VISHAY MOSFET: SiR84DP, SiR87ADP
INFINEON / IR MOSFET: BSC19N1NS3G
TOSHIBA MOSFET: TPH6R3ANL, TPH8R8ANH
PANJIT MOSFET: PJQ5478A
NIKO-SEM MOSFET: P81BKA
POTENS Semiconductor MOSFET: PDC92X
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current 60 A
IDP Pulsed Drain Current 210 A
EAS Avalanche Energy, Single pulse 100 mJ
PD@TC=25℃ Total Power Dissipation 125 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V,ID=10A. --- 8.5 10.0
VGS=4.5V,ID=10A. --- 9.5 12.0
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=25A --- 49.9 --- nC
Qgs Gate-Source Charge --- 6.5 ---
Qgd Gate-Drain Charge --- 12.4 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V ,
RG=2.2Ω, ID=25A
--- 20.6 --- ns
Tr Rise Time --- 5 ---
Td(off) Turn-Off Delay Time --- 51.8 ---
Tf Fall Time --- 9 ---
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 2604 --- pF
Coss Output Capacitance --- 362 ---
Crss Reverse Transfer Capacitance --- 6.5 ---
IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A
ISP Pulsed Source Current --- --- 210 A
VSD Diode Forward Voltage VGS=0V , IS=12A , TJ=25℃ --- --- 1.3 V
trr Reverse Recovery Time IF=12A,dI/dt=100A/µs,TJ=25℃ --- 60.4 --- nS
Qrr Reverse Recovery Charge --- 106.1 --- nC
Frequently Asked Questions
What are the core specifications of the WSD60N10GDN56 MOSFET?
The WSD60N10GDN56 is an N-channel MOSFET featuring a Drain-Source voltage of 100V, a continuous current rating of 60A, a typical on-resistance of 8.5mΩ at VGS=10V, and is housed in a DFN5X6-8 package.
What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage ranges from a minimum of 1.0V to a maximum of 2.5V when tested under VGS = VDS and ID = 250uA conditions.
In what products is this MOSFET commonly applied?
It is ideal for e-cigarettes, wireless charging modules, motor controllers, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and other consumer electronics.
Which MOSFETs can be cross-referenced or replaced by WSD60N10GDN56?
Equivalent models include AOS (AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923), Onsemi/Fairchild (NTMFS6B14N), Vishay (SiR84DP, SiR87ADP), Infineon/IR (BSC19N1NS3G), Toshiba (TPH6R3ANL, TPH8R8ANH), Panjit (PJQ5478A), Niko-Sem (P81BKA), and Potens Semiconductor (PDC92X).
What are the operating and storage temperature limitations?
Both the operating junction temperature range (TJ) and storage temperature range (TSTG) are specified from -55 to 150 ℃.

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