The high-performance PDS6710 MOSFET (compatible with WSP6067A FET) is a complementary N&P-channel power transistor designed for highly efficient power management and switching configurations.
Key Specifications
Voltage BVDSS
60V / -60V
Current ID
7A / -7.5A
Resistance RDSON
38mΩ / 80mΩ
Channel & Package
N&P-Ch, SOP-8
Target Applications
E-cigarettes
Wireless charging
Motors
Drones
Medical devices
Car chargers
Controllers
Digital products
Small household appliances
Consumer electronics
Frequently Asked Questions
Q1What is the voltage rating (BVDSS) of the PDS6710 / WSP6067A FET?
The voltage rating (BVDSS) for this complementary N&P-Channel MOSFET is 60V for the N-channel and -60V for the P-channel.
Q2What is the continuous drain current (ID) limit for these devices?
The continuous drain current (ID) is rated at 7A for the N-channel and -7.5A for the P-channel configuration.
Q3What is the internal resistance (RDSON) of this MOSFET?
The internal resistance (RDSON) is 38mΩ for the N-channel and 80mΩ for the P-channel, ensuring efficient switching operation.
Q4What package type is used for this MOSFET?
This complementary N&P-Channel MOSFET is housed in a standard, surface-mount SOP-8 package.
Q5What are the main application areas for this device?
It is widely used in e-cigarettes, wireless charging modules, motors, drones, medical devices, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
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