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The WSP4447 is a top-performing MOSFET that utilizes trench technology and has a high cell density. It offers excellent RDSON and gate charge, making it suitable for use in most synchronous buck converter applications. The WSP4447 meets RoHS and Green Product standards, and comes with 100% EAS guarantee for full reliability.
Allows for higher cell density, resulting in a Green Device with Super Low Gate Charge.
Features excellent CdV/dt effect decline and meets strict RoHS and Green Product standards.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TA=25℃ | Continuous Drain Current, VGS @ -10V1 | -11 | A |
| ID@TA=70℃ | Continuous Drain Current, VGS @ -10V1 | -9.0 | A |
| IDM a | 300µs Pulsed Drain Current (VGS=-10V) | -44 | A |
| EAS b | Avalanche Energy, Single pulse (L=0.1mH) | 54 | mJ |
| IAS b | Avalanche Current, Single pulse (L=0.1mH) | -33 | A |
| PD@TA=25℃ | Total Power Dissipation4 | 2.0 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=-1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-13A | --- | 13 | 16 | mΩ |
| VGS=-4.5V , ID=-5A | --- | 18 | 26 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.4 | -1.9 | -2.4 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | Reference to 25℃ , ID=-250uA | --- | 5.04 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-10A | --- | 18 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-10V , ID=-11A | --- | 32 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.2 | --- | ||
| Qgd | Gate-Drain Charge | --- | 8 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω | --- | 14 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 41 | --- | ||
| Tf | Fall Time | --- | 22 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 1500 | --- | pF |
| Coss | Output Capacitance | --- | 235 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 180 | --- |
This converter is designed to efficiently power a wide range of devices and electronics, including:
