What are the primary specifications of the WSD20100DN56 MOSFET?
The WSD20100DN56 is an N-channel MOSFET designed with a 20V drain-source breakdown voltage, a continuous drain current rating of 90A, and an ultra-low static drain-source on-resistance (RDS(ON)) of typically 1.6mΩ at 10V VGS. It comes in a compact DFN5X6-8 package.
What typical applications are suitable for the WSD20100DN56?
Due to its high current capabilities and low heat generation, it is ideal for electronic cigarettes, drone electronics, rechargeable electrical power tools, muscle fascia guns, fast-charging PD power systems, and various small household electrical appliances.
Which other manufacturer parts are equivalent to this MOSFET?
The WSD20100DN56 MOSFET serves as a high-performance alternative or direct cross-reference to devices such as the AOS AON6572 and the POTENS Semiconductor PDC394X.
What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) has a minimum value of 0.5V and a maximum value of 1.0V, with a typical trigger point at 0.68V, allowing it to interface efficiently with logic-level gate drivers.
What is the junction-to-case thermal resistance (RθJC) of this device?
The device features an exceptionally low junction-to-case thermal resistance (RθJC) of 1.5 ℃/W, ensuring highly efficient heat dissipation away from the silicon die to the external heatsink or PCB surface.
What are the absolute limits for storage and operating temperatures?
Both the operating junction temperature (TJ) and the storage temperature (TSTG) ratings extend from a minimum of -55 ℃ to a maximum limit of 150 ℃.
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