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China WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET Manufacturer, Products
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China WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET Manufacturer, Products

China WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET Manufacturer, Products

Part Number：WSD30300DN56G BVDSS：30V ID：300A RDSON：0.7mΩ   Channel：N-channel Package：DFN5X6-8
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Product Description

Voltage 20V
Current 90A
Resistance 1.6mΩ
Channel & Package N-Ch / DFN5X6-8
The voltage of WSD20100DN56 MOSFET is 20V, the current is 90A, the resistance is 1.6mΩ, the channel is N-channel, and the package is DFN5X6-8.
Applications
Electronic cigarettes MOSFET Drones MOSFET Electrical tools MOSFET Fascia guns MOSFET PD MOSFET Small household appliances MOSFET
Cross References
MOSFET AON6572. MOSFET PDC394X.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID@TC=25℃ Continuous Drain Current1 90 A
ID@TC=100℃ Continuous Drain Current1 48 A
IDM Pulsed Drain Current2 270 A
EAS Single Pulse Avalanche Energy3 80 mJ
IAS Avalanche Current 40 A
PD@TC=25℃ Total Power Dissipation4 83 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
RθJA Thermal Resistance Junction-ambient 1(t≦10S) 20 ℃/W
RθJA Thermal Resistance Junction-ambient 1(Steady State) 55 ℃/W
RθJC Thermal Resistance Junction-case 1 1.5 ℃/W
Electrical Characteristics
Symbol Parameter Conditions Min Typ Max Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 23 --- V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.68 1.0 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 1.6 2.0 mΩ
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A   1.9 2.5 mΩ
RDS(ON) Static Drain-Source On-Resistance2 VGS=2.5V , ID=20A --- 2.8 3.8 mΩ
IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=16V , VGS=0V , TJ=125℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±10 uA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 --- Ω
Qg Total Gate Charge (10V) VDS=15V , VGS=10V , ID=20A --- 77 --- nC
Qgs Gate-Source Charge --- 8.7 ---
Qgd Gate-Drain Charge --- 14 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3 , ID=20A --- 10.2 --- ns
Tr Rise Time --- 11.7 ---
Td(off) Turn-Off Delay Time --- 56.4 ---
Tf Fall Time --- 16.2 ---
Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz --- 4307 --- pF
Coss Output Capacitance --- 501 ---
Crss Reverse Transfer Capacitance --- 321 ---
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 50 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time IF=20A , di/dt=100A/µs , TJ=25℃ --- 22 --- nS
Qrr Reverse Recovery Charge --- 72 --- nC
Frequently Asked Questions
What are the core specifications of the WSD20100DN56 MOSFET?
The WSD20100DN56 is an N-channel MOSFET featuring a drain-source voltage (VDS) of 20V, a continuous current rating of 90A, and an ultra-low static drain-source on-resistance (RDS(ON)) of 1.6mΩ typical at VGS=10V.
What packaging does the WSD20100DN56 utilize?
It is housed in a compact, highly thermally efficient DFN5X6-8 package, which is suitable for high-density power design requirements.
What are the primary applications for this MOSFET?
This MOSFET is commonly applied in electronic cigarettes, unmanned aerial vehicles (drones), power tools, fascia muscle guns, PD power delivery circuits, and various small household electronic appliances.
What is the gate threshold voltage (VGS(th)) of WSD20100DN56?
The gate threshold voltage typically ranges from a minimum of 0.5V to a maximum of 1.0V, with a typical value of 0.68V (tested at VGS=VDS, ID=250uA).
Are there any comparable or equivalent MOSFET parts?
Yes, it is comparable in electrical properties and parameters to equivalent options such as the AON6572 and PDC394X MOSFETs.

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