2.7mΩ
Resistance (RDS(ON))
Target Applications
Drones MOSFET
Motors MOSFET
Medical MOSFET
Power Tools MOSFET
ESCs MOSFET
Cross Reference Equivalents
AOS MOSFET: AON6276, AONS62814T
STMicroelectronics MOSFET: STL13N8F7, STL135N8F7AG
Absolute Maximum Ratings
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
80 |
V |
| VGS |
Gate-Source Voltage |
±20 |
V |
| TJ |
Maximum Junction Temperature |
150 |
°C |
| ID |
Storage Temperature Range |
-55 to 150 |
°C |
| ID |
Continuous Drain Current, VGS=10V, TC=25°C |
130 |
A |
| Continuous Drain Current, VGS=10V, TC=70°C |
89 |
A |
| IDM |
Pulsed Drain Current, TC=25°C |
400 |
A |
| PD |
Maximum Power Dissipation, TC=25°C |
200 |
W |
| RθJC |
Thermal Resistance-Junction to Case |
1.25 |
°C |
Electrical Characteristics
| Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V , ID=250uA |
80 |
--- |
--- |
V |
| ΔBVDSS/ΔTJ |
BVDSS Temperature Coefficient |
Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
| RDS(ON) |
Static Drain-Source On-Resistance |
VGS=10V , ID=40A |
--- |
2.7 |
3.6 |
mΩ |
| VGS(th) |
Gate Threshold Voltage |
VGS=VDS , ID=250uA |
2.0 |
3.0 |
4.0 |
V |
| ΔVGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ |
| IDSS |
Drain-Source Leakage Current |
VDS=48V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=48V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
| IGSS |
Gate-Source Leakage Current |
VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
| Qg |
Total Gate Charge (10V) |
VDS=30V , VGS=10V , ID=30A |
--- |
48.6 |
--- |
nC |
| Qgs |
Gate-Source Charge |
--- |
17.5 |
--- |
| Qgd |
Gate-Drain Charge |
--- |
10.4 |
--- |
| Td(on) |
Turn-On Delay Time |
VDD=30V , VGS=10V , RG=2.5Ω, ID=2A , RL=15Ω |
--- |
20 |
--- |
ns |
| Tr |
Rise Time |
--- |
10 |
--- |
| Td(off) |
Turn-Off Delay Time |
--- |
35 |
--- |
| Tf |
Fall Time |
--- |
12 |
--- |
| Ciss |
Input Capacitance |
VDS=25V , VGS=0V , f=1MHz |
--- |
4150 |
--- |
pF |
| Coss |
Output Capacitance |
--- |
471 |
--- |
| Crss |
Reverse Transfer Capacitance |
--- |
20 |
--- |
Frequently Asked Questions
What are the primary specifications of the WSD80130DN56 MOSFET?
The WSD80130DN56 is an N-channel MOSFET designed with an 80V drain-source breakdown voltage, a high continuous current handling capability of 130A, and a very low static on-resistance (RDS(ON)) of 2.7mΩ typical.
In what package style is the WSD80130DN56 supplied?
This high-efficiency power MOSFET is supplied in a compact and thermally enhanced DFN5X6-8 package, which is ideal for space-constrained and power-dense electronics layouts.
Which applications are best suited for this MOSFET?
The WSD80130DN56 is optimized for diverse applications including drones, motor control systems, medical equipment, power tools, and electronic speed controllers (ESCs).
What are the compatible alternative models for WSD80130DN56?
It serves as an equivalent or cross-reference option to AOS MOSFET models AON6276 and AONS62814T, as well as STMicroelectronics models STL13N8F7 and STL135N8F7AG.
What is the gate-source voltage limit and maximum junction temperature for this device?
The gate-source voltage (VGS) limit is ±20V, and it operates safely up to a maximum junction temperature (TJ) of 150°C.
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