Olukey
1 / 3
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 70 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 35 | A |
| ID@TA=25℃ | Continuous Drain Current, VGS @ 10V1 | 8.2 | A |
| ID@TA=70℃ | Continuous Drain Current, VGS @ 10V1 | 6.6 | A |
| IDM | Pulsed Drain Current2 TC=25℃ | 150 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 169 | mJ |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 26 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 113 | W |
| PD@TC=100℃ | Total Power Dissipation4 | 45 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
The WSF70N10 is a high-performance, trench N-Channel MOSFET designed with extreme high cell density to offer optimized RDSON and gate charge.
It is primarily used for synchronous buck converters, DC-DC converters, LED TV backlights, and power management systems in TV converters.
The maximum rated Drain-Source Voltage (VDS) of the WSF70N10 is 100V.
Yes. The WSF70N10 fully meets both RoHS and Green Product requirements, and it is built with 100% EAS guaranteed reliability.
At a case temperature (TC) of 25℃, the continuous drain current (ID) is rated up to 70A at VGS @ 10V.
The WSF70N10 operates reliably across an operating junction and storage temperature range of -55 to 150℃.
