The WSK150N12 is a high-performance N-channel power MOSFET designed for efficient power switching. With an optimized voltage rating of 120V and support for continuous currents up to 150A, this device is engineered to provide reliable operation in demanding electrical environments.
Voltage (VDS)
120V
Current (ID)
150A
Resistance (RDS(on))
5mΩ
Channel Type
N-Channel
Package
TO-263-2L
Target Applications
E-cigarette
Wireless charger
Motor driver
Emergency power supply
Drone
Medical equipment
Car charger
Controller
3D printer
Digital products
Small appliances
Consumer electronics
Technical Specification Details
Part Number
Configuration
Type
VDS
VGS
ID (A)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Ciss
Package
(V)
±(V)
Max.
@10V
@6V
@4.5V
@2.5V
@1.8V
(pF)
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
WSK150N10
Single
N-Ch
100
25
150
3.7
4.2
-
-
-
-
-
-
-
-
4120
TO-263-2L
Cross-Reference & Equivalents:
This device can potentially cross-reference or replace the following models:
AOS AOB2500LAOS AOB410LPOTENS PDH0980
Frequently Asked Questions (FAQ)
What are the key technical parameters of the WSK150N12 MOSFET?
The WSK150N12 is an N-channel MOSFET that features a maximum voltage rating of 120V, a continuous drain current rating of 150A, and a low on-resistance of 5mΩ. It is packaged in a standard TO-263-2L package.
What package is the WSK150N12 MOSFET provided in?
It comes in a TO-263-2L package, which offers excellent thermal dissipation properties, making it ideal for high-power density surface-mount applications.
In which applications is the WSK150N12 MOSFET commonly used?
This N-channel MOSFET is highly versatile and widely used in e-cigarettes, wireless chargers, motor drivers, emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, and various consumer electronics.
Which MOSFETs can be replaced by or are cross-referenced with this product line?
Based on equivalent designs, products in this family can serve as alternatives or cross-references to popular models such as AOS AOB2500L, AOS AOB410L, and POTENS PDH0980 depending on structural and electrical configurations.
Why is a lower R_DS(ON) value of 5mΩ beneficial?
A lower drain-to-source on-resistance (R_DS(ON)) minimizes conduction power losses and reduces heat generation, which greatly improves the energy efficiency of the target application.
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