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| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V | 230 | A |
| IDM | Pulsed Drain Current..TC=25°C | 1150 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 1800 | mJ |
| IAS | Avalanche Current, Single pulse,L=0.5mH | 120 | A |
| PD@TC=25℃ | Total Power Dissipation | 375 | W |
| PD@TC=100℃ | Total Power Dissipation | 187 | W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | 175 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V,ID=50A | --- | 1.6 | 2.3 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=50A | --- | 260 | --- | nC |
| Qgs | Gate-Source Charge | --- | 80 | --- | ||
| Qgd | Gate-Drain Charge | --- | 60 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A. | --- | 88 | --- | ns |
| Tr | Rise Time | --- | 50 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 228 | --- | ||
| Tf | Fall Time | --- | 322 | --- | ||
| Ciss | Input Capacitance | VDS=40V , VGS=0V , f=1MHz | --- | 13900 | --- | pF |
| Coss | Output Capacitance | --- | 6160 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 220 | --- |
The WSM340N10G is widely used in synchronous rectification, DC/DC converters, load switches, medical equipment, drones, PD power supplies, LED power supplies, and various industrial equipment.
It features advanced high cell density Trench technology, which provides exceptionally low gate charge and excellent RDSON performance.
The continuous drain current rating (ID) is 340A at a case temperature of 25℃, when VGS is at 10V.
The typical Static Drain-Source On-Resistance (RDS(ON)) is 1.6 mΩ under the test condition of VGS=10V and ID=50A.
The operating junction temperature range (TJ) goes up to 175℃, and the storage temperature range (TSTG) is from -55 to 175℃.
Yes, it meets both RoHS and Green Product requirements, and is 100% EAS guaranteed with approved reliability.
