ODM WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET Factory, Distributors

The WSM320N04G is a high-performance MOSFET that uses a trench design and has a very high cell density. It has excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. The WSM320N04G meets RoHS and Green Product requirements and is guaranteed to have 100% EAS and full function reliability.

Key Features & Advantages

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Advanced Trench Technology: High cell density design for optimal conduction efficiency.

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Low Gate Charge: Engineered for optimized performance and high switching speeds.

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100% EAS Guarantee: Full reliability with excellent CdV/dt effect decline stability.

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Eco-Friendly Option: Fully compliant with RoHS and Green Product requirements.

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1,7	320	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V1,7	192	A
IDM	Pulsed Drain Current2	900	A
EAS	Single Pulse Avalanche Energy3	980	mJ
IAS	Avalanche Current	70	A
PD@TC=25℃	Total Power Dissipation4	250	W
TSTG	Storage Temperature Range	-55 to 175	℃
TJ	Operating Junction Temperature Range	-55 to 175	℃

Electrical Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.050	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=50A	---	160	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gate Charge (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Gate-Source Charge		---	43	---
Qgd	Gate-Drain Charge		---	83	---
Td(on)	Turn-On Delay Time	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Rise Time		---	115	---
Td(off)	Turn-Off Delay Time		---	95	---
Tf	Fall Time		---	80	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Coss	Output Capacitance		---	1200	---
Crss	Reverse Transfer Capacitance		---	800	---

Applications

High Frequency Point-of-Load

Synchronous Buck Converter

Networking DC-DC Power System

Power Tool Application

Electronic Cigarettes

Wireless Charging Systems

Drones & UAVs

Medical Electronic Devices

Car Charging Controllers

Digital Products

Small Household Appliances

Consumer Electronics

Frequently Asked Questions

What is the core technology used in WSM320N04G?

The WSM320N04G utilizes advanced high cell density Trench technology, which provides high conduction performance and a very low gate charge for optimal efficiency.

What is the maximum rated drain-source voltage and continuous current?

This MOSFET has a maximum Drain-Source Voltage (VDS) of 40V and is rated for a continuous drain current (ID) of up to 320A at TC=25℃.

What are the typical On-Resistance (RDS(ON)) values?

The typical RDS(ON) is 1.2 mΩ when VGS is 10V (at ID=25A), and 1.7 mΩ when VGS is 4.5V (at ID=20A).

Does the WSM320N04G support eco-friendly initiatives?

Yes, the WSM320N04G fully meets RoHS and Green Product requirements, making it an eco-friendly component choice.

What applications are best suited for this MOSFET?

It is ideal for high frequency point-of-load synchronous buck converters, DC-DC power systems, power tools, wireless chargers, drones, medical hardware, and various consumer electronics.

What is the operating temperature range?

The operating junction temperature range (TJ) and storage temperature range (TSTG) are both specified between -55 and 175 ℃.