The WST02N20 MOSFET features an N-channel configuration capable of supporting a voltage rating of 200V, a continuous current of 1.2A, and an on-state resistance of 570mΩ. Encased in a SOT-23-6L or TO-263-2L package, this versatile component is engineered to deliver reliable switching performance and power management.
Target Applications
Automotive electronics
LED lights
Audio
Digital products
Small appliances
Consumer electronics
Protection boards
Technical Parameter Specifications
Part Number
Configuration
Type
VDS (V)
VGS ±(V)
ID (A)
RDS(ON) (mΩ)
Ciss (pF)
Package
@10V
@6V
@4.5V
@2.5V
@1.8V
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
WST02N20
Single
N-Ch
200
25
1.2
570
680
-
-
-
-
-
-
-
-
280
SOT-23-6L
Cross-Reference & Compatibility
The WST02N20 device can be cross-referenced or acts as an equivalent alternative to:
ON Semiconductor / FAIRCHILD FDC2612.
Frequently Asked Questions
What are the core technical ratings of the WST02N20 MOSFET?
The WST02N20 is an N-channel MOSFET designed to handle a drain-source voltage (VDS) of up to 200V, a continuous drain current (ID) of 1.2A, and has an on-resistance (RDS(on)) of 570mΩ.
In what package type is the WST02N20 available?
This MOSFET is package-configured in SOT-23-6L (as specified in the detailed testing parameters table) and TO-263-2L.
What typical applications can the WST02N20 be integrated into?
It is commonly used across consumer and industrial applications, including automotive electronics, LED lights, audio systems, digital products, small household appliances, consumer electronics, and battery protection boards.
What is the gate-source voltage (VGS) limit of the WST02N20?
The device offers a gate-source voltage rating of ±25V, ensuring gate integrity under standard operating conditions.
Which model can act as an equivalent or replacement for WST02N20?
The WST02N20 lists compatibility and serves as a cross-reference option for the ON/Fairchild FDC2612.
What is the input capacitance (Ciss) value?
The input capacitance (Ciss) for the WST02N20 MOSFET is rated at 280pF, helping to maintain efficient gate drive characteristics.
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