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| Part number | Configuration | Type | VDS (V) | VGS ±(V) | ID (A) | RDS(ON)(mΩ) @10V | RDS(ON)(mΩ) @6V / @4.5V / @2.5V / @1.8V | Ciss (pF) | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Typ. | Max. | - | Typ. | Max. | |||||||||||||
| Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Typ. | |||||||
| WSF4N65 | Single | N-Ch | 650 | 30 | 4 | 2600 | 3000 | - | - | - | - | - | - | - | - | 550 | TO-252-2L |
| WSF2N65 | Single | N-Ch | 650 | 30 | 2 | 4000 | 4800 | - | - | - | - | - | - | - | - | 310 | TO-252-2L |
| WSF7N65 | Single | N-Ch | 650 | 30 | 7 | 1200 | 1450 | - | - | - | - | - | - | - | - | 225 | TO-252-2L |
The voltage rating (VDS) for the WSF4N65, WSF2N65, and WSF7N65 N-channel MOSFET series is 650V.
These components are designed and manufactured using the standard TO-252-2L package format.
They are commonly applied in LED voltage regulations, power adapters, industrial control units, medical power supplies, and 5G communication infrastructures.
The continuous drain current (ID) is rated at 4A for the WSF4N65, 2A for the WSF2N65, and 7A for the WSF7N65.
The typical RDS(on) resistance for the WSF7N65 N-channel MOSFET is 1200mΩ under specified test conditions.
