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High-performance power MOSFET featuring 40V voltage rating, 120A current capability, and 1.85mΩ resistance in a DFN5X6-8 package.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID @ TC=25℃ | Continuous Drain Current, VGS @ 10V1,7 | 120 | A |
| ID @ TC=100℃ | Continuous Drain Current, VGS @ 10V1,7 | 100 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Single Pulse Avalanche Energy3 | 240 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD @ TC=25℃ | Total Power Dissipation4 | 104 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 55 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V , VGS=10V , ID=10A | --- | 76 | 91 | nC |
| Qgs | Gate-Source Charge | --- | 12 | 14.4 | ||
| Qgd | Gate-Drain Charge | --- | 15.5 | 18.6 | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGEN=10V , RG=1Ω, ID=1A , RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Rise Time | --- | 10 | 12 | ||
| Td(off) | Turn-Off Delay Time | --- | 58 | 69 | ||
| Tf | Fall Time | --- | 34 | 40 | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 4350 | --- | pF |
| Coss | Output Capacitance | --- | 690 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 370 | --- |