Custom WSD40120DN56 N-channel 40V 120A DFN5X6-8 WINSOK MOSFET Factory, Factories

Part Number:WSD40120DN56 BVDSS:40V ID:120A RDSON:1.85mΩ   Channel:N-channel Package:DFN5X6-8

Product Description

WSD40120DN56 N-Channel MOSFET

High-performance power MOSFET featuring 40V voltage rating, 120A current capability, and 1.85mΩ resistance in a DFN5X6-8 package.

Voltage (VDS)
40V
Current (ID)
120A
Resistance (RDS(ON))
1.85mΩ
Package
DFN5X6-8
Applications
E-cigarettes MOSFET Wireless charging MOSFET Drones MOSFET Medical care MOSFET Car chargers MOSFET Controllers MOSFET Digital products MOSFET Small household appliances MOSFET Consumer electronics MOSFET
Cross Reference & Equivalents
AOS: AON6234, AON6232, AON623
Onsemi / Fairchild: NVMFS5C442NL
Vishay: SiRA52ADP, SiJA52ADP
STMicroelectronics: STL12N4LF6AG
NXP: PH484S
Toshiba: TPH1R14PB
Panjit: PJQ544
Niko-Sem: PKCSBB
Potens Semiconductor: PDC496X
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID @ TC=25℃ Continuous Drain Current, VGS @ 10V1,7 120 A
ID @ TC=100℃ Continuous Drain Current, VGS @ 10V1,7 100 A
IDM Pulsed Drain Current2 400 A
EAS Single Pulse Avalanche Energy3 240 mJ
IAS Avalanche Current 31 A
PD @ TC=25℃ Total Power Dissipation4 104 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.043 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 1.85 2.4
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A --- 2.5 3.3
VGS(th) Gate Threshold Voltage VGS=VDS , ID=250uA 1.5 1.8 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -6.94 --- mV/℃
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 2 uA
VDS=32V , VGS=0V , TJ=55℃ --- --- 10
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=20A --- 55 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.1 2 Ω
Qg Total Gate Charge (10V) VDS=20V , VGS=10V , ID=10A --- 76 91 nC
Qgs Gate-Source Charge --- 12 14.4
Qgd Gate-Drain Charge --- 15.5 18.6
Td(on) Turn-On Delay Time VDD=30V , VGEN=10V , RG=1Ω, ID=1A , RL=15Ω. --- 20 24 ns
Tr Rise Time --- 10 12
Td(off) Turn-Off Delay Time --- 58 69
Tf Fall Time --- 34 40
Ciss Input Capacitance VDS=20V , VGS=0V , f=1MHz --- 4350 --- pF
Coss Output Capacitance --- 690 ---
Crss Reverse Transfer Capacitance --- 370 ---
Frequently Asked Questions
What are the primary electrical specifications of the WSD40120DN56 MOSFET?
The WSD40120DN56 is an N-channel MOSFET designed with a 40V drain-source voltage (VDS), a high continuous current rating of 120A, and a low typical static drain-source on-resistance (RDS(ON)) of 1.85mΩ.
What package does the WSD40120DN56 MOSFET use?
This MOSFET uses the compact and thermally efficient DFN5X6-8 package layout, suitable for high-density power design layouts.
What application areas is this MOSFET suitable for?
It is highly suitable for electronic devices such as e-cigarettes, wireless charging modules, drones, medical equipment, car chargers, power controllers, digital devices, small household appliances, and other consumer electronics.
What are the operating and storage temperature ranges for this device?
The operating junction temperature (TJ) range and storage temperature (TSTG) range for the WSD40120DN56 are specified from -55℃ to 150℃.
What are some equivalent cross-reference models for the WSD40120DN56?
Equivalent cross-reference models include AOS (AON6234, AON6232, AON623), Onsemi/Fairchild (NVMFS5C442NL), Vishay (SiRA52ADP, SiJA52ADP), STMicroelectronics (STL12N4LF6AG), NXP (PH484S), Toshiba (TPH1R14PB), Panjit (PJQ544), Niko-Sem (PKCSBB), and Potens Semiconductor (PDC496X).

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