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| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSD30L120ADN56 | Single | P-Ch | -30 | 20 | -120 | 3.8 | 5 | - | - | 5.8 | 8.2 | - | - | - | - | 9400 | DFN5X6-8 |
| WSD30L120DN56 | Single | P-Ch | -30 | 20 | -120 | 2.9 | 3.6 | - | - | 5 | 6.8 | - | - | - | - | 6100 | DFN5X6-8 |
Both MOSFETs feature a drain-source voltage (VDS) of -30V, a continuous drain current (ID) of -120A, and are built as P-channel devices housed in the compact DFN5X6-8 package.
The WSD30L120ADN56 has a typical RDS(ON) resistance of 3.8mΩ (Max 5mΩ) at 10V, while the WSD30L120DN56 features a lower typical resistance of 2.9mΩ (Max 3.6mΩ) at 10V.
They are ideal for power management and switching in applications like e-cigarettes, wireless charging stations, motors, drones, medical devices, car chargers, smart controllers, digital electronics, and small household appliances.
Compatible alternatives and cross-references include the PANJIT PJQ5427 MOSFET and the Potens PDC3901X MOSFET.
The WSD30L120ADN56 has an input capacitance (Ciss) of 9400 pF, whereas the WSD30L120DN56 has a lower Ciss value of 6100 pF, which can impact switching speeds and gate drive requirements.
They are configured in a DFN5X6-8 package layout, which provides excellent thermal dissipation performance and a highly compact footprint for dense PCB layouts.
