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WSD4018DN22 P-Channel MOSFET Specifications Overview
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@Tc=25℃ | Continuous Drain Current, VGS @ -10V¹ | -18 | A |
| ID@Tc=70℃ | Continuous Drain Current, VGS @ -10V¹ | -14.6 | A |
| IDM | 300μS Pulsed Drain Current, VGS=-4.5V² | 54 | A |
| PD@Tc=25℃ | Total Power Dissipation³ | 19 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance² | VGS=-10V, ID=-8.0A | --- | 26 | 34 | mΩ |
| VGS=-4.5V, ID=-6.0A | --- | 31 | 42 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -3.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-40V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-40V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V, VGS=-10V, ID=-1.5A | --- | 27 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.7 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=-20V, VGS=-10V, RG=3Ω, RL=10Ω | --- | 9.8 | --- | ns |
| Tr | Rise Time | --- | 11 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 54 | --- | ||
| Tf | Fall Time | --- | 7.1 | --- | ||
| Ciss | Input Capacitance | VDS=-20V, VGS=0V, f=1MHz | --- | 1560 | --- | pF |
| Coss | Output Capacitance | --- | 116 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 97 | --- |
The WSD4018DN22 is a P-channel MOSFET featuring advanced high cell density Trench technology, super low gate charge, and an excellent decline in the Cdv/dt effect. It is also classified as a green device.
It features a drain-source voltage of -40V, continuous current of -18A, and a static drain-source on-resistance (RDS(ON)) of typical 26mΩ at VGS=-10V.
This MOSFET is housed in a compact DFN2X2-6L package, ideal for high-density, space-constrained circuit designs.
Typical applications include face recognition equipment, e-cigarettes, small household appliances, and car chargers.
Common cross-reference models include the AOS MOSFET AON2409 and the POTENS MOSFET PDB3909L.
The operating junction temperature range (TJ) for this MOSFET is from -55 to 150 ℃.
