What are the core specifications of the WSD50P10DN56 MOSFET?
The WSD50P10DN56 is a P-channel MOSFET featuring a drain-to-source voltage (VDS) of -100V, a continuous drain current (ID) of -34A, a typical on-resistance (RDS(ON)) of 32mΩ at 10V, and is housed in a DFN5X6-8 package.
What is the package type for WSD50P10DN56 and WSD50P10ADN56?
Both WSD50P10DN56 and WSD50P10ADN56 MOSFETs are packaged in the compact and thermally efficient DFN5X6-8 package.
In what applications are these MOSFETs commonly used?
These MOSFETs are widely applied in consumer electronics, wireless charging systems, motor control, drones, medical devices, car chargers, controllers, digital products, small household appliances, and E-cigarettes.
Are there equivalent cross-reference parts for Sinopower or VISHAY?
Yes, equivalent parts for cross-referencing include the Sinopower SM1A33PSKP MOSFET and the VISHAY Si7489DP MOSFET.
How does WSD50P10DN56 compare with WSD50P10ADN56?
While both share a -100V rating and P-channel design in a DFN5X6-8 package, the WSD50P10ADN56 offers a higher current rating of -40A but has a higher on-resistance (RDS(ON) of 62mΩ typical @10V) compared to the WSD50P10DN56 (32mΩ typical @10V).