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The WSD20L120DN56 is a top-performing P-Ch MOSFET with a high-density cell structure, giving superb RDSON and gate charge for most synchronous buck converter uses. The WSD20L120DN56 meets 100% EAS requirements for RoHS and environmentally friendly products, with full-function reliability approval.
| Symbol | Parameter | Rating | Units | |
|---|---|---|---|---|
| 10s | Steady State | |||
| VDS | Drain-Source Voltage | -20 | V | |
| VGS | Gate-Source Voltage | ±10 | V | |
| ID@TC=25℃ | Continuous Drain Current, VGS @ -10V1 | -120 | A | |
| ID@TC=100℃ | Continuous Drain Current, VGS @ -10V1 | -69.5 | A | |
| ID@TA=25℃ | Continuous Drain Current, VGS @ -10V1 | -25 | -22 | A |
| ID@TA=70℃ | Continuous Drain Current, VGS @ -10V1 | -24 | -18 | A |
| IDM | Pulsed Drain Current2 | -340 | A | |
| EAS | Single Pulse Avalanche Energy3 | 300 | mJ | |
| IAS | Avalanche Current | -36 | A | |
| PD@TC=25℃ | Total Power Dissipation4 | 130 | W | |
| PD@TA=25℃ | Total Power Dissipation4 | 6.8 | 6.25 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ | |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ | |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=-1mA | --- | -0.0212 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V, ID=-20A | --- | 2.1 | 2.7 | mΩ |
| VGS=-2.5V, ID=-20A | --- | 2.8 | 3.7 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=-250uA | -0.4 | -0.6 | -1.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | --- | 4.8 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=-20V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-20V, VGS=0V, TJ=55℃ | --- | --- | -6 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-20A | --- | 100 | --- | S |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | --- | 2 | 5 | Ω |
| Qg | Total Gate Charge (-4.5V) | VDS=-10V, VGS=-4.5V, ID=-20A | --- | 100 | --- | nC |
| Qgs | Gate-Source Charge | --- | 21 | --- | ||
| Qgd | Gate-Drain Charge | --- | 32 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=-10V, VGEN=-4.5V, RG=3Ω, ID=-1A, RL=0.5Ω | --- | 20 | --- | ns |
| Tr | Rise Time | --- | 50 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 100 | --- | ||
| Tf | Fall Time | --- | 40 | --- | ||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | --- | 4950 | --- | pF |
| Coss | Output Capacitance | --- | 380 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 290 | --- |
