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| Part Number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| (V) | ±(V) | Max. | @10V | @6V | @4.5V | @2.5V | @1.8V | (pF) | |||||||||
| Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | ||||||||
| WSC15N10 | Single | N-Ch | 100 | 20 | 15 | 80 | 100 | - | - | 115 | 130 | - | - | - | - | 940 | TO-251-3L |
The WSC15N10 can replace or cross-reference with the following industry models:
The WSC15N10 is an N-channel MOSFET designed to support a drain-source breakdown voltage (VDS) of 100V, a continuous drain current (ID) of 15A, and feature a typical static drain-source on-resistance (RDS(ON)) of 80mΩ at 10V gate drive.
This MOSFET comes in a standard TO-251-3L package, which offers reliable thermal performance and a compact footprint suitable for various driver designs.
The WSC15N10 is highly versatile and commonly applied in E-cigarettes, wireless chargers, motors, BMS (Battery Management Systems), emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small appliances, and general consumer electronics.
It can serve as a substitute or cross-reference for AOS AOI4286, AOS AOI478, ST STU6NF10, and POTENS PDR0906.
The input capacitance (Ciss) for the WSC15N10 MOSFET is 940 pF, which facilitates faster switching performance in low-to-medium frequency applications.
The WSC15N10 is configured as a Single N-channel (N-Ch) MOSFET, ideal for low-side switching applications.
