Custom WSD30150DN56 N-channel 30V 150A DFN5X6-8 WINSOK MOSFET Supplier, Distributors

Part Number:WSD30150DN56 BVDSS:30V ID:150A RDSON:1.8mΩ   Channel:N-channel Package:DFN5X6-8

Product Description

The voltage of WSD30150DN56 MOSFET is 30V, the current is 150A, the resistance is 1.8mΩ, the channel is N-channel, and the package is DFN5X6-8.

Voltage 30V
Current 150A
Resistance 1.8mΩ
Channel N-Channel
Package DFN5X6-8
Applications
E-cigarettes MOSFET
Wireless charging MOSFET
Drones MOSFET
Medical care MOSFET
Car chargers MOSFET
Controllers MOSFET
Digital products MOSFET
Small household appliances MOSFET
Consumer electronics MOSFET
Compatible & Cross Reference Models
AOS MOSFET AON6512, AONS3234
Onsemi / FAIRCHILD MOSFET FDMC81DCCM
NXP MOSFET PSMN1R7-3YL
TOSHIBA MOSFET TPH1R43NL
PANJIT MOSFET PJQ5428
NIKO-SEM MOSFET PKC26BB, PKE24BB
POTENS Semiconductor MOSFET PDC392X
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID @TC=25℃ Continuous Drain Current, VGS @ 10V 150 A
ID @TC=100℃ Continuous Drain Current, VGS @ 10V 83 A
IDM Pulsed Drain Current 200 A
EAS Single Pulse Avalanche Energy 125 mJ
IAS Avalanche Current 50 A
PD @TC=25℃ Total Power Dissipation 62.5 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.02 --- V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 1.8 2.4
VGS=4.5V , ID=15A --- 2.4 3.2
VGS(th) Gate Threshold Voltage VGS=VDS , ID=250uA 1.4 1.7 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -6.1 --- mV/℃
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A --- 27 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.8 1.5 Ω
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=30A --- 26 --- nC
Qgs Gate-Source Charge --- 9.5 ---
Qgd Gate-Drain Charge --- 11.4 ---
Td(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω, ID=1A, RL=15Ω. --- 20 --- ns
Tr Rise Time --- 12 ---
Td(off) Turn-Off Delay Time --- 69 ---
Tf Fall Time --- 29 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 2560 3200 3850 pF
Coss Output Capacitance 560 680 800
Crss Reverse Transfer Capacitance 260 320 420
Frequently Asked Questions (FAQ)
What are the primary specifications of the WSD30150DN56 MOSFET?
The WSD30150DN56 is an N-channel MOSFET featuring a maximum Drain-Source Voltage (VDS) of 30V, a Continuous Drain Current (ID) rating of 150A, and an ultra-low static Drain-Source On-Resistance (RDS(ON)) of 1.8mΩ at VGS=10V. It is packaged in a DFN5X6-8 format.
What are the typical application areas for this MOSFET?
This device is commonly used in electronic applications such as e-cigarettes, wireless charging stations, drones, medical equipment, car chargers, controllers, digital gadgets, small household appliances, and various consumer electronics.
What is the operating temperature range for the WSD30150DN56?
The operating junction temperature range (TJ) and storage temperature range (TSTG) are specified from -55℃ to 150℃.
What are some equivalent or cross-reference MOSFET models?
Compatible cross-reference alternatives include AOS (AON6512, AONS3234), Onsemi/Fairchild (FDMC81DCCM), NXP (PSMN1R7-3YL), Toshiba (TPH1R43NL), Panjit (PJQ5428), Niko-Sem (PKC26BB, PKE24BB), and Potens Semiconductor (PDC392X).
What is the Gate Threshold Voltage of this MOSFET?
The Gate Threshold Voltage (VGS(th)) ranges between a minimum of 1.4V and a maximum of 2.5V, with a typical value of 1.7V when measured at VGS=VDS and ID=250uA.
How does the on-resistance change with gate-source voltage?
The typical Static Drain-Source On-Resistance (RDS(ON)) is 1.8mΩ (max 2.4mΩ) at a gate-source voltage (VGS) of 10V, and it rises slightly to a typical value of 2.4mΩ (max 3.2mΩ) at a lower gate-source drive voltage of 4.5V.

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