Custom WSD40110DN56G N-channel 40V 110A DFN5X6-8 WINSOK MOSFET Suppliers, Buy

Part Number:WSD40110DN56G BVDSS:40V ID:110A RDSON:2.5mΩ   Channel:N-channel Package:DFN5X6-8

Product Description

Voltage
40V
Current
85A
Resistance
4.5mΩ
Channel
N-channel
Package
DFN5X6-8
The voltage of WSD4080DN56 MOSFET is 40V, the current is 85A, the resistance is 4.5mΩ, the channel is N-channel, and the package is DFN5X6-8.
Small appliances MOSFET Handheld appliances MOSFET Motors MOSFET
Cross References
  • AOS MOSFET: AON623
  • STMicroelectronics MOSFET: STL52DN4LF7AG, STL64DN4F7AG, STL64N4F7AG
  • PANJIT MOSFET: PJQ5442
  • POTENS Semiconductor MOSFET: PDC496X
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 85 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 58 A
IDM Pulsed Drain Current2 100 A
EAS Single Pulse Avalanche Energy3 110.5 mJ
IAS Avalanche Current 47 A
PD@TC=25℃ Total Power Dissipation4 52.1 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W
RθJC Thermal Resistance Junction-Case1 2.4 ℃/W
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A --- 4.5 6.5 mΩ
VGS=4.5V , ID=5A --- 6.4 8.5
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=32V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=5A --- 27 --- S
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A --- 20 --- nC
Qgs Gate-Source Charge --- 5.8 ---
Qgd Gate-Drain Charge --- 9.5 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V RG=3.3Ω ID=1A --- 15.2 --- ns
Tr Rise Time --- 8.8 ---
Td(off) Turn-Off Delay Time --- 74 ---
Tf Fall Time --- 7 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2354 --- pF
Coss Output Capacitance --- 215 ---
Crss Reverse Transfer Capacitance --- 175 ---
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 70 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
Frequently Asked Questions
Q What are the key specifications of the WSD4080DN56 MOSFET?
The WSD4080DN56 MOSFET features a voltage of 40V, a continuous current of 85A, a typical static drain-source on-resistance of 4.5mΩ (at VGS=10V), N-channel configuration, and comes in a DFN5X6-8 package.
Q What are the typical applications for this MOSFET?
It is commonly applied in small appliances, handheld appliances, and motor drive systems.
Q What is the operating temperature range for WSD4080DN56?
Both the operating junction temperature range (TJ) and storage temperature range (TSTG) are -55 to 150 ℃.
Q Which other MOSFET models can cross-reference with WSD4080DN56?
Cross-reference models include AOS AON623, STMicroelectronics STL52DN4LF7AG / STL64DN4F7AG / STL64N4F7AG, PANJIT PJQ5442, and POTENS Semiconductor PDC496X.
Q What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage ranges from a minimum of 1.0V to a maximum of 2.5V when tested under VGS=VDS and ID=250uA.
Q What is the total gate charge (Qg) of this device?
The typical total gate charge is 20nC under test conditions of VDS=20V, VGS=4.5V, and ID=10A.

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