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The voltage of WSD86P10DN56 MOSFET is -100V, the current is -86A, the resistance is 17mΩ, the channel is P-Channel, and the package is DFN5X6-8L.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | |||||
| WSD86P10DN56 | Single | P-Ch | -100 | 20 | -86 | 17 | 28 | - | - | - | - | - | - | - | - | 6105 | DFN5X6-8L |
The WSD86P10DN56 MOSFET operates with a drain-source voltage (VDS) of -100V, support for a continuous drain current (ID) of up to -86A, and features a low typical gate-source resistance of 17mΩ.
This semiconductor features a Single configuration, operates under a P-Channel design, and is housed in a compact DFN5X6-8L package.
It is widely used in electronic cigarettes, wireless chargers, electric motor controls, drones, medical equipment, vehicle chargers, system controllers, digital products, small household appliances, and various consumer electronics.
According to the technical parameters, the WSD86P10DN56 MOSFET has a typical input capacitance (Ciss) of 6105 pF.
At a gate voltage of @10V, the maximum RDS(ON) resistance is measured at 17mΩ with a typical resistance value reaching 28mΩ.
