The voltage of WSK150N10 MOSFET is 100V, the current is 150A, the resistance is 3.7mΩ, the channel is N-channel, and the package is TO-263-2L.
Frequently Asked Questions
What are the primary electrical ratings for the WSK150N10 MOSFET?
The WSK150N10 N-channel MOSFET features a drain-source voltage (VDS) of 100V, a continuous drain current (ID) capacity of 150A, and a typical on-resistance (RDS(ON)) of 3.7mΩ.
What package style is used for WSK150N10?
The WSK150N10 MOSFET is housed in a industry-standard TO-263-2L surface-mount package, which provides excellent thermal performance and layout efficiency.
In which applications is the WSK150N10 commonly used?
It is highly suited for a wide range of applications including e-cigarettes, wireless chargers, motor control, emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small appliances, and consumer electronics.
What is the gate configuration and input capacitance (Ciss) for this model?
This is a Single N-channel configuration. The typical input capacitance (Ciss) is rated at 4120 pF, which helps ensure stable performance during high-frequency switching operations.
What is the typical gate-source voltage (VGS) rating?
The gate-source voltage (VGS) limit for the WSK150N10 MOSFET is ±25V, offering reliable gate drive control under varying circuit conditions.
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