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Voltage (VDS)
200V
Current (ID)
26A
Resistance (RDS)
80mΩ
Channel & Package
N-Ch / TO-263-2L
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSK26N20 | Single | N-Ch | 200 | 20 | 26 | 80 | 100 | - | - | - | - | - | - | - | - | 1318 | TO-263-2L |
💡 What is the typical applications for the WSK26N20 MOSFET?
The WSK26N20 is highly suitable for a wide range of applications including E-cigarettes, wireless chargers, motors, Battery Management Systems (BMS), emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small appliances, and general consumer electronics.
💡 What is the maximum voltage rating (VDS) of WSK26N20?
The maximum drain-to-source voltage (VDS) rating for this N-channel MOSFET is 200V.
💡 What is the on-resistance (RDS(on)) configuration of this device?
At a gate-to-source voltage (VGS) of 10V, the typical RDS(ON) is 80mΩ, and the maximum limit is 100mΩ, ensuring efficient performance and low heat dissipation.
💡 What is the current capacity of the WSK26N20 MOSFET?
This MOSFET supports a continuous drain current (ID) of up to 26A, making it suitable for moderate to high power applications.
💡 What packaging does the WSK26N20 feature?
The WSK26N20 uses a TO-263-2L package, known for its excellent thermal management characteristics and board-level durability.
💡 What is the input capacitance (Ciss) value of WSK26N20?
The input capacitance (Ciss) is rated at approximately 1318 pF, allowing for optimal switching speed and control behavior.
