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| Part Number | Configuration | Type | VDS | VGS | ID | RDS(ON) (mΩ) | Ciss | Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | (A) | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSR110N20 | Single | N-Ch | 200 | 20 | 110 | 9.2 | 12 | - | - | - | - | - | - | - | - | 10700 | TO-220-3L |
The WSR110N20 is a high-performance N-channel MOSFET designed for power management applications, featuring a voltage rating of 200V and a continuous current capacity of 110A.
At a gate-source voltage (VGS) of 10V, the typical on-resistance (RDS(ON)) of the WSR110N20 is 9.2mΩ, with a maximum limit of 12mΩ, ensuring high efficiency and minimized conduction losses.
It is encapsulated in a TO-220-3L package, which offers excellent thermal dissipation characteristics, ideal for standard industrial-grade power designs.
Common applications include Power Supplies, Adapters, Medical Equipment, Industrial Control Systems, LED Controllers, PD (Power Delivery) modules, Large Electrical Appliances, Audio Equipment, Drones, Motor Controls, and Battery Management Systems (BMS).
The WSR110N20 features a typical input capacitance (Ciss) rating of 10700 pF, which is essential for determining switching performance and gate driver design parameters.
