What are the main parameters of the WSR60N25 MOSFET?
The WSR60N25 is an N-channel MOSFET characterized by a drain-source voltage (VDS) of 250V, continuous drain current (ID) of 55A, and a static drain-source on-state resistance (RDS(ON)) of 60mΩ at 10V.
What packaging does the WSR60N25 utilize?
The device is housed in a standard TO-220-3L package, which is widely recognized for its robust thermal dissipation capabilities in power switching circuits.
In which applications is the WSR60N25 MOSFET commonly integrated?
This component is suitable for diverse systems including power supplies, adapters, LED controllers, medical equipment, industrial controllers, motor drivers, drones, and battery management systems (BMS).
What is the input capacitance (Ciss) value of this MOSFET?
The WSR60N25 features a typical input capacitance (Ciss) of 4510 pF, which helps in calculating gate charge requirements during driver circuit design.
Are there equivalent parts to WSR60N25 for design cross-referencing?
Yes, similar performance alternatives or related models include the STP100N6F7, STP80N6F6, and STP17NF25 from STMicroelectronics, as well as the PDP50N20 from POTENS.
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