The WSR80N06 and WSR88N06 are high-performance N-channel MOSFETs designed with a 60V voltage capacity, excellent RDS(on) resistance features, and optimized for reliable power management and switching applications.
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Drain-Source Voltage (Vds)
60V
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Drain Current (Id)
80A / 88A
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Resistance (Rds(on))
9.1mΩ / 7.5mΩ
🔄 Cross Reference & Replacement Part Numbers:
AOS AOT2610L AOTF2606L, ON, FAIRCHILD FDP65N06 FQF65N06 NTP5864N, ST STP45NF06, Nexperia PSMN015-60PS, INFINEON, IR IR60N06, TOSHIBA TK3R3A06PL, POTENS PDP6966A, Sinopower SM6019NSF, NIKO P1006BT
Frequently Asked Questions
What are the primary electrical specifications of WSR80N06 and WSR88N06?
Both MOSFETs operate at a Drain-Source voltage (VDS) of 60V in an N-channel configuration. The WSR80N06 supports a current of 80A with an RDS(on) of 9.1mΩ, while the WSR88N06 supports a current of 88A with an RDS(on) of 7.5mΩ.
What package type is used for these MOSFETs?
Both the WSR80N06 and WSR88N06 MOSFETs are housed in a standard TO-220-3L package, which provides excellent thermal dissipation and structural reliability.
What are the typical applications for WSR80N06 and WSR88N06?
These MOSFETs are widely applied in E-cigarettes, wireless chargers, motors, BMS (Battery Management Systems), emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small appliances, and consumer electronics.
What equivalent part models can replace the WSR80N06 or WSR88N06?
Compatible cross-reference alternatives include AOS AOT2610L / AOTF2606L, ON/Fairchild FDP65N06 / FQF65N06 / NTP5864N, ST STP45NF06, Nexperia PSMN015-60PS, IR IR60N06, Toshiba TK3R3A06PL, Potens PDP6966A, Sinopower SM6019NSF, and Niko P1006BT.
Are these MOSFETs N-channel or P-channel?
Both WSR80N06 and WSR88N06 are N-channel configuration MOSFETs, which are commonly preferred for high-efficiency switching circuits.
What is the input capacitance (Ciss) for these devices?
The input capacitance (Ciss) is 2350 pF for the WSR80N06 model and 4018 pF for the WSR88N06 model.