| Part Number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON) (mΩ) | Ciss (pF) |
Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | ||||||||
| WST3325 | Single | P-Ch | -20 | 12 | -5.6 | - | - | - | - | 42 | 55 | 56 | 70 | 73 | 85 | 938 | SOT-23-3L |
| WST2339 | Single | P-Ch | -20 | 12 | -7.1 | - | - | - | - | 17 | 19 | 21 | 25 | 30 | 35 | 2000 | SOT-23-3L |
AO3413, AO3415A, AO3419, AO3423, AO3435, AO3493, AO3495, AO3499, AO21115C, NTR3A30PZ, Si2365EDS, TK40S10K3Z, PJA55P03, SM2337PSA, SM2307PSA, PDEN2423S, DTS3419, DTS2319, DTS2301A
Both are P-channel MOSFETs with a drain-source voltage (VDS) of -20V and gate-source voltage (VGS) of 12V. They are encapsulated in the compact SOT-23-3L package.
At a gate-source voltage of 4.5V, the WST3325 features a typical RDS(ON) of 42mΩ (maximum 55mΩ), while the WST2339 offers a typical RDS(ON) of 17mΩ (maximum 19mΩ).
The continuous drain current (ID) limit for the WST3325 is -5.6A, whereas the WST2339 is rated for a higher continuous drain current of -7.1A.
These MOSFETs are widely applied in power management circuits for electronic cigarettes, controllers, digital products, small household appliances, and various consumer electronics.
Both devices utilize the industry-standard SOT-23-3L package, which is ideal for space-constrained surface-mount designs.
Cross-reference equivalents include model numbers such as AO3413, AO3415A, AO3419, AO3423, AO3435, AO3493, AO3495, AO3499, AO21115C, NTR3A30PZ, Si2365EDS, TK40S10K3Z, PJA55P03, SM2337PSA, SM2307PSA, PDEN2423S, DTS3419, DTS2319, and DTS2301A.