What are the main technical parameters of the WSD80120DN56 FET?
The WSD80120DN56 is an N-channel FET featuring a voltage rating (BVDSS) of 85V, a maximum current capacity of 120A, and a low internal resistance of 3.7mΩ, packaged in a DFN5X6-8 form factor.
Which equivalent models can be replaced by the WSD80120DN56?
This MOSFET can serve as a suitable replacement or equivalent for models such as AON6276, AONS62814T, STL13N8F7, and STL135N8F7AG.
What is the package type of the WSD80120DN56?
The device is packaged in a standard compact DFN5X6-8 format, which offers excellent thermal performance and high density board layouts.
In which industries and equipment can the WSD80120DN56 be applied?
It is widely used in medical voltage equipment, photographic gear, drones, industrial control systems, 5G communication infrastructure, and automotive electronics.
Does this MOSFET support N-channel polarity?
Yes, the WSD80120DN56 is an N-channel MOSFET designed for high efficiency switching applications.
How does the 3.7mΩ resistance benefit my application?
The ultra-low internal resistance of 3.7mΩ minimizes power loss and heat generation during operation, increasing overall efficiency in demanding power systems.
Olukey
