Free Sample WSC60N03 N-channel 30V 60A TO-251-3L WINSOK MOSFET Manufacturer, Factory

Part Number:WSC60N03 BVDSS:30V ID:60A RDSON:4.1mΩ Channel:N-channel Package:TO-251-3L

Product Description

The WSC60N03 is a high-performance N-channel MOSFET designed for efficient power management and switching applications. Featuring a 30V breakdown voltage, 60A continuous drain current support, and an exceptionally low on-resistance of 4.1mΩ, it delivers reliable efficiency in standard packaging.

Voltage (VDS)
30V
Current (ID)
60A
Resistance (RDS(on))
4.1mΩ
Channel Type
N-Channel
Package
TO-251-3L

Applications

E-cigarette Wireless Charger Motor Control BMS (Battery Management System) Emergency Power Supply Drone Medical Equipment Car Charger Controller 3D Printer Digital Products Small Appliances Consumer Electronics

Technical Specifications

Part Number Configuration Type VDS (V) VGS ±(V) ID (A) RDS(ON) (mΩ) RDS(ON) (mΩ) Ciss (pF) Package
@10V @6V @4.5V @2.5V @1.8V
Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ.
WSC60N03 Single N-Ch 30 20 60 4.1 6.5 - - 6.5 8 - - - - 2330 TO-251-3L

Equivalent & Cross-Reference Models

The following part numbers can be cross-referenced or used as equivalent alternative models:

AOI538, AOI4184, STH130N8F7-2, STH140N8F7-2, STH145N8F7-2AG, STU75N3LLH6, SM1A63NHUB, SM1A63NHUC, P8010BI

Frequently Asked Questions

Q1: What are the primary specifications of the WSC60N03 MOSFET?
A1: The WSC60N03 is an N-channel MOSFET with a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 60A, and a typical RDS(ON) of 4.1mΩ (max 6.5mΩ) at a VGS of 10V. It is packaged in a TO-251-3L format.
Q2: In what applications is the WSC60N03 commonly utilized?
A2: It is highly suitable for e-cigarettes, wireless chargers, electric motor controls, BMS (battery management systems), emergency power supplies, drones, medical appliances, car chargers, controllers, 3D printers, digital products, and other consumer electronics.
Q3: What are the typical and maximum RDS(ON) values under different gate voltages?
A3: At a VGS of 10V, the typical RDS(ON) is 4.1mΩ with a maximum of 6.5mΩ. At a VGS of 4.5V, the typical RDS(ON) is 6.5mΩ with a maximum of 8mΩ.
Q4: What is the packaging form of this MOSFET and its benefits?
A4: The device comes in a TO-251-3L package. This package is ideal for through-hole mounting configurations, offering low profile layout capabilities, good power handling, and reliable thermal dissipation.
Q5: Which alternative models can replace the WSC60N03?
A5: Depending on your circuit requirements, compatible cross-references include models like AOI538, AOI4184, STH130N8F7-2, STH140N8F7-2, STH145N8F7-2AG, STU75N3LLH6, SM1A63NHUB, SM1A63NHUC, and P8010BI.

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